Fabrication of Sn-Doped TiO₂ Thin Films with Solvothermal Post-Crystallization
DOI:
https://doi.org/10.69681/lajae.v8i1.42Keywords:
Crystallization, Solvothermal, Thin filmsAbstract
TiO2 thin films are widely studied owing to their great potential application in electronic or optoelectronic devices. They are of great interest due to their unique properties, which make them suitable for use in thin film transistors, sensors, or solar cells. Obtaining TiO2 thin films with optimal characteristics for specific applications depends on the synthesis and fabrication process. In this work, TiO2 thin films are obtained through a low-temperature and facile process and fabrication method based on the sol-gel process. Sn-doped TiO2 thin films were synthesized to modify their physical properties. The obtained films were under a post-crystallization process to improve their structure. The Sn-doped TiO2 films show anatase structure with thickness between 173 to 237 nm and roughness lower than 2 nm.
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Copyright (c) 2025 Jesús Camez Cota, Paulette Gómez López, Alberto Gaxiola, Diana Sánchez Ahumada, Rafael Ramírez Bon, Manuel Cota Ruiz, Andrés Castro Beltrán, Clemente Alvarado Beltrán
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